Electrical circuit model of ITO/AZO/Ge photodetector

Electrical circuit model of ITO/AZO/Ge photodetector

In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a...

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Main Authors: Malkeshkumar Patel, Joondong Kim
Format: Article
Language:English
Published: Elsevier 2017-10-01
Series:Data in Brief
Subjects:
ITO/AZO/Ge photodetector
R-C circuit model
Heterojunction
Impedance spectroscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S2352340917303335
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spelling doaj-5cb0fbcb70654034bbc12a037480f0482020-11-25T02:16:17ZengElsevierData in Brief2352-34092017-10-0114C626710.1016/j.dib.2017.07.031Electrical circuit model of ITO/AZO/Ge photodetectorMalkeshkumar PatelJoondong KimIn this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.http://www.sciencedirect.com/science/article/pii/S2352340917303335ITO/AZO/Ge photodetectorR-C circuit modelHeterojunctionImpedance spectroscopy
collection DOAJ
language English
format Article
sources DOAJ
author Malkeshkumar Patel
Joondong Kim
spellingShingle Malkeshkumar Patel
Joondong Kim
Electrical circuit model of ITO/AZO/Ge photodetector
Data in Brief
ITO/AZO/Ge photodetector
R-C circuit model
Heterojunction
Impedance spectroscopy
author_facet Malkeshkumar Patel
Joondong Kim
author_sort Malkeshkumar Patel
title Electrical circuit model of ITO/AZO/Ge photodetector
title_short Electrical circuit model of ITO/AZO/Ge photodetector
title_full Electrical circuit model of ITO/AZO/Ge photodetector
title_fullStr Electrical circuit model of ITO/AZO/Ge photodetector
title_full_unstemmed Electrical circuit model of ITO/AZO/Ge photodetector
title_sort electrical circuit model of ito/azo/ge photodetector
publisher Elsevier
series Data in Brief
issn 2352-3409
publishDate 2017-10-01
description In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.
topic ITO/AZO/Ge photodetector
R-C circuit model
Heterojunction
Impedance spectroscopy
url http://www.sciencedirect.com/science/article/pii/S2352340917303335
work_keys_str_mv AT malkeshkumarpatel electricalcircuitmodelofitoazogephotodetector
AT joondongkim electricalcircuitmodelofitoazogephotodetector
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