Electrical circuit model of ITO/AZO/Ge photodetector

Electrical circuit model of ITO/AZO/Ge photodetector

In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a...

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Bibliographic Details
Main Authors: Malkeshkumar Patel, Joondong Kim
Format: Article
Language:English
Published: Elsevier 2017-10-01
Series:Data in Brief
Subjects:
ITO/AZO/Ge photodetector
R-C circuit model
Heterojunction
Impedance spectroscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S2352340917303335
Description
Summary:In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.
ISSN:2352-3409

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