Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures

Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures

In this work, nitride lateral Schottky barrier diodes (SBDs) are manufactured on InGaN channel heterostructures, and the superior performances are investigated in detail. Due to the decent electron confinement of InGaN channel heterostructures, a high current on/off ratio of 107 is achieved for the...

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Bibliographic Details
Main Authors:	Yachao Zhang, Zhizhe Wang, Shenglei Zhao, Shengrui Xu, Jincheng Zhang, Yue Hao
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-01-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5129112

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