Brain-inspired ferroelectric Si nanowire synaptic device

Brain-inspired ferroelectric Si nanowire synaptic device

We herein demonstrate a brain-inspired synaptic device using a poly(vinylidene fluoride) and trifluoroethylene (PVDF-TrFE)/silicon nanowire (Si NW) based ferroelectric field effect transistor (FeFET). The PVDF-TrFE/Si NW FeFET structure achieves reliable synaptic plasticity such as symmetrical poten...

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Bibliographic Details
Main Authors:	M. Lee, W. Park, H. Son, J. Seo, O. Kwon, S. Oh, M. G. Hahm, U. J. Kim, B. Cho
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2021-03-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/5.0035220

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