Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers
Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2 and 24.4 cm2·V−1·s−1, respectively. T...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
|
| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2015/124640 |
| Summary: | Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2 and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated. |
|---|---|
| ISSN: | 1687-4110 1687-4129 |