| Summary: | We propose a novel cross bowtie antenna using phase-shift lines to realize circular polarization (CP) in the infrared (IR) spectrum. The CP antenna consists of a vertical, a horizontal antenna, and two elliptical loops connecting adjacent tips of the antennas to create a 90° phase shift. The phase-shift lines are conceived to realize a single terminal of the antenna where a detecting material can be mounted and enable the detecting material to fully utilize the field enhancement from the antenna. In full-wave simulations, a nanometer-scale low-bandgap semiconductor, i.e., indium gallium arsenide antimonide (InGaAsSb) capable of detecting IR wave is loaded at the antenna terminal and the antenna structure is designed to achieve CP absorption at 180 THz. The antenna includes a transmission line-based impedance matching structure to compensate for the reactance of the InGaAsSb semiconductor load. To verify the CP detection of the antenna near 180 THz, we numerically show a higher field enhancement value and absorption rate in the antenna terminal in a specific CP case when the antenna is illuminated with incident waves with various polarization states. Also, we design 2 × 1 and 2 × 2 antenna arrays using the CP antennas connected with metallic traces and show that the CP absorption at 180 THz is maintained. Finally, an illustration of a focal plane array based on the proposed CP cross bowtie antennas coupled with the InGaAsSb for a full Stokes polarimeter is presented.
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