Thermal Impact on the Power Device Behaviour: Application on the IGBT
The functional limits of an IGBT are defined by an essential parameter: the maximum junction temperature permitted. The technical specifications of each IGBT type provide the limit values of the functional temperature for example, from -55 C to 150 C. The electrical energy dissipated by the IGBT for...
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Stefan cel Mare University of Suceava
2007-04-01
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Online Access: | http://dx.doi.org/10.4316/AECE.2007.01002 |
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doaj-59bebfdc3de8481fbf1ba5b6d3963b602020-11-25T00:40:58ZengStefan cel Mare University of SuceavaAdvances in Electrical and Computer Engineering1582-74451844-76002007-04-0171912Thermal Impact on the Power Device Behaviour: Application on the IGBTHALLOUCHE, A.TILMATNE, A.The functional limits of an IGBT are defined by an essential parameter: the maximum junction temperature permitted. The technical specifications of each IGBT type provide the limit values of the functional temperature for example, from -55 C to 150 C. The electrical energy dissipated by the IGBT for any current direction, appears in form of thermal energy at the junctions level. But we should bear in mind that the ambient temperature represents an energetic level through which is insured the raise of the junction temperature.http://dx.doi.org/10.4316/AECE.2007.01002punch-trough IGBThigh frequencytemperature of junctiontailing current |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
HALLOUCHE, A. TILMATNE, A. |
spellingShingle |
HALLOUCHE, A. TILMATNE, A. Thermal Impact on the Power Device Behaviour: Application on the IGBT Advances in Electrical and Computer Engineering punch-trough IGBT high frequency temperature of junction tailing current |
author_facet |
HALLOUCHE, A. TILMATNE, A. |
author_sort |
HALLOUCHE, A. |
title |
Thermal Impact on the Power Device Behaviour: Application on the IGBT |
title_short |
Thermal Impact on the Power Device Behaviour: Application on the IGBT |
title_full |
Thermal Impact on the Power Device Behaviour: Application on the IGBT |
title_fullStr |
Thermal Impact on the Power Device Behaviour: Application on the IGBT |
title_full_unstemmed |
Thermal Impact on the Power Device Behaviour: Application on the IGBT |
title_sort |
thermal impact on the power device behaviour: application on the igbt |
publisher |
Stefan cel Mare University of Suceava |
series |
Advances in Electrical and Computer Engineering |
issn |
1582-7445 1844-7600 |
publishDate |
2007-04-01 |
description |
The functional limits of an IGBT are defined by an essential parameter: the maximum junction temperature permitted. The technical specifications of each IGBT type provide the limit values of the functional temperature for example, from -55 C to 150 C. The electrical energy dissipated by the IGBT for any current direction, appears in form of thermal energy at the junctions level. But we should bear in mind that the ambient temperature represents an energetic level through which is insured the raise of the junction temperature. |
topic |
punch-trough IGBT high frequency temperature of junction tailing current |
url |
http://dx.doi.org/10.4316/AECE.2007.01002 |
work_keys_str_mv |
AT hallouchea thermalimpactonthepowerdevicebehaviourapplicationontheigbt AT tilmatnea thermalimpactonthepowerdevicebehaviourapplicationontheigbt |
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1725287929888112640 |