Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO<sub>2</sub> bottom layer. Pre-patterned electrodes offer the advantages of reducing...

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Bibliographic Details
Main Authors: Nicolo Oliva, Emanuele Andrea Casu, Wolfgang A. Vitale, Igor Stolichnov, Adrian Mihai Ionescu
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Black phosphorous
pre-patterned electrodes
2D materials
field-effect devices
atomic layer deposition
Online Access:https://ieeexplore.ieee.org/document/8320284/

Internet

https://ieeexplore.ieee.org/document/8320284/

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