Switching kinetics of SiC resistive memory for harsh environments
Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mec...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4926674 |