Switching kinetics of SiC resistive memory for harsh environments

• Main Authors: K. A. Morgan, J. Fan, R. Huang, L. Zhong, R. P. Gowers, L. Jiang, C. H. de Groot
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2015-07-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.4926674

Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slow switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using 60Co gamma irradiation.