Preparation and study of the porous Si surfaces obtained by electrochemical method

Preparation and study of the porous Si surfaces obtained by electrochemical method

Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of...

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Bibliographic Details
Main Authors: V.G. Lytovchenko, T.I. Gorbanyuk, V.P. Kladko, A.V. Sarikov, N.V. Safriuk, L.L. Fedorenko, S. Ašmontas, J. Gradauskas, E. Širmulis, O. Žalys
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2017-12-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
porous Si
electrochemical etching
gas sensing
MIS structure
photo¬lu¬mi¬nes¬cence
X-ray diffraction
Online Access:http://journal-spqeo.org.ua/n4_2017/P385-395abstr.html
Description
Summary:Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si based MIS structures as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.
ISSN:1560-8034
1605-6582

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