VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements

VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements

Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide semiconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and optical measurements. Using microscopic observation for the ship of the device and by C-V character...

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Bibliographic Details
Main Authors:	C. -T. Salame, C. Rizk, G. Jelian
Format:	Article
Language:	English
Published:	Hindawi Limited 2001-01-01
Series:	Active and Passive Electronic Components
Online Access:	http://dx.doi.org/10.1155/APEC.23.185

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