Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructures
Abstract We perform first principle density functional theory calculations to predict the substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based 2-D heterostructures. We adsorb graphene and MoS $$_{2}$$ 2 on novel 2-D ferromagnetic semiconductor—CrI $$_{3}$$ 3 and investigate the ele...
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2021-01-01
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Online Access: | https://doi.org/10.1038/s41598-020-80290-5 |
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doaj-5742f4f36baa4d0588efea143611b80b2021-01-10T12:46:21ZengNature Publishing GroupScientific Reports2045-23222021-01-0111111210.1038/s41598-020-80290-5Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructuresShamik Chakraborty0Abhilash Ravikumar1Nanoelectronics Research Laboratory, Department of Electronics and Communication Engineering, Amrita School of Engineering, Amrita Vishwa VidyapeethamNanoelectronics Research Laboratory, Department of Electronics and Communication Engineering, Amrita School of Engineering, Amrita Vishwa VidyapeethamAbstract We perform first principle density functional theory calculations to predict the substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based 2-D heterostructures. We adsorb graphene and MoS $$_{2}$$ 2 on novel 2-D ferromagnetic semiconductor—CrI $$_{3}$$ 3 and investigate the electronic and magnetic properties of these heterostructures with and without spin orbit coupling (SOC). We find that when strained MoS $$_{2}$$ 2 is adsorbed on CrI $$_{3}$$ 3 , the spin dependent band gap which is a characteristic of CrI $$_{3}$$ 3 , ceases to remain. The bandgap of the heterostructure reduces drastically ( $$\sim$$ ∼ 70%) and the heterostructure shows an indirect, spin-independent bandgap of $$\sim$$ ∼ 0.5 eV. The heterostructure remains magnetic (with and without SOC) with the magnetic moment localized primarily on CrI $$_{3}$$ 3 . Adsorption of graphene on CrI $$_{3}$$ 3 induces an electronic phase transition of the subsequent heterostructure to a ferromagnetic metal in both the spin configurations with magnetic moment localized on CrI $$_{3}$$ 3 . The SOC induced interaction opens a bandgap of $$\sim$$ ∼ 30 meV in the Dirac cone of graphene, which allows us to visualize Chern insulating states without reducing van der Waals gap.https://doi.org/10.1038/s41598-020-80290-5 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Shamik Chakraborty Abhilash Ravikumar |
spellingShingle |
Shamik Chakraborty Abhilash Ravikumar Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructures Scientific Reports |
author_facet |
Shamik Chakraborty Abhilash Ravikumar |
author_sort |
Shamik Chakraborty |
title |
Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructures |
title_short |
Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructures |
title_full |
Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructures |
title_fullStr |
Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructures |
title_full_unstemmed |
Substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based van der Waals heterostructures |
title_sort |
substrate induced electronic phase transitions of cri $$_{3}$$ 3 based van der waals heterostructures |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2021-01-01 |
description |
Abstract We perform first principle density functional theory calculations to predict the substrate induced electronic phase transitions of CrI $$_{3}$$ 3 based 2-D heterostructures. We adsorb graphene and MoS $$_{2}$$ 2 on novel 2-D ferromagnetic semiconductor—CrI $$_{3}$$ 3 and investigate the electronic and magnetic properties of these heterostructures with and without spin orbit coupling (SOC). We find that when strained MoS $$_{2}$$ 2 is adsorbed on CrI $$_{3}$$ 3 , the spin dependent band gap which is a characteristic of CrI $$_{3}$$ 3 , ceases to remain. The bandgap of the heterostructure reduces drastically ( $$\sim$$ ∼ 70%) and the heterostructure shows an indirect, spin-independent bandgap of $$\sim$$ ∼ 0.5 eV. The heterostructure remains magnetic (with and without SOC) with the magnetic moment localized primarily on CrI $$_{3}$$ 3 . Adsorption of graphene on CrI $$_{3}$$ 3 induces an electronic phase transition of the subsequent heterostructure to a ferromagnetic metal in both the spin configurations with magnetic moment localized on CrI $$_{3}$$ 3 . The SOC induced interaction opens a bandgap of $$\sim$$ ∼ 30 meV in the Dirac cone of graphene, which allows us to visualize Chern insulating states without reducing van der Waals gap. |
url |
https://doi.org/10.1038/s41598-020-80290-5 |
work_keys_str_mv |
AT shamikchakraborty substrateinducedelectronicphasetransitionsofcri33basedvanderwaalsheterostructures AT abhilashravikumar substrateinducedelectronicphasetransitionsofcri33basedvanderwaalsheterostructures |
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1714950800523919360 |