Thermal annealing induced structural, optical and electrical properties change in As40Se60-xBix chalcogenide thin films
This work reports the formation of topological Bi2Se3 phase upon annealing higher % of Bi content in amorphous As40Se60-xBix (x = 2, 7, 10 and 15%) chalcogenide thin films prepared by thermal evaporation process. The phase identification was done by X-ray diffraction study and Field emission scannin...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5111019 |