SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P)

SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P)

Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P) emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The...

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Bibliographic Details
Main Authors: N. K. Zhumashev, K. D. Munbaev, N. L. Bazhenov, N. D. Stoyanov, S. S. Kizhaev, T. I. Gurina, A. P. Astakhova, A. V. Tchernyaev, S. S. Molchanov, K. M. Salikhov, V. E. Bougrov, H. Lipsanen
Format: Article
Language:English
Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2016-01-01
Series:Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
Subjects:
infrared light-emitting diode
electroluminescence
Online Access:http://ntv.ifmo.ru/file/article/14574.pdf

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