SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P)

• Main Authors: N. K. Zhumashev, K. D. Munbaev, N. L. Bazhenov, N. D. Stoyanov, S. S. Kizhaev, T. I. Gurina, A. P. Astakhova, A. V. Tchernyaev, S. S. Molchanov, K. M. Salikhov, V. E. Bougrov, H. Lipsanen
• Format: Article
• Language: English
• Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2016-01-01
• Series: Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
• Subjects: infrared light-emitting diode; electroluminescence
• Online Access: http://ntv.ifmo.ru/file/article/14574.pdf

Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P) emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb)/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P) can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.