Low Voltage and High-Speed Niobium Heterostructure Resistance Switching Memory Devices Integrating Ferro-Electric Enhanced Aluminum–Hafnium–Chromium–Aluminum Oxide
Novel niobium heterostructure devices that integrate aluminum, hafnium, and chromium oxide are designed and constructed by sputtering and atomic layer deposition. The devices are examined for use in resistive switching (RS) memory cells. Specifically, Nb-AlO<sub>x</sub>-HfO<sub>x&l...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8014423/ |