Low Voltage and High-Speed Niobium Heterostructure Resistance Switching Memory Devices Integrating Ferro-Electric Enhanced Aluminum–Hafnium–Chromium–Aluminum Oxide

Low Voltage and High-Speed Niobium Heterostructure Resistance Switching Memory Devices Integrating Ferro-Electric Enhanced Aluminum–Hafnium–Chromium–Aluminum Oxide

Novel niobium heterostructure devices that integrate aluminum, hafnium, and chromium oxide are designed and constructed by sputtering and atomic layer deposition. The devices are examined for use in resistive switching (RS) memory cells. Specifically, Nb-AlO<sub>x</sub>-HfO<sub>x&l...

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Bibliographic Details
Main Authors: Lance Lerum, Mohammed Fahem, Osama M. Nayfeh, C. Dave Rees, Kenneth S. Simonsen, Ayax D. Ramirez
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Resistive switching
memory
niobium
heterostructures
transport conduction
Poole Frenkel
Online Access:https://ieeexplore.ieee.org/document/8014423/

Internet

https://ieeexplore.ieee.org/document/8014423/

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