Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers

Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers

We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreove...

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Bibliographic Details
Main Authors: Zong-Lin Li, Shen-Chieh Lin, Gray Lin, Hui-Wen Cheng, Kien-Wen Sun, Chien-Ping Lee
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Micromachines
Subjects:
photonic crystals
surface-emitting lasers
middle infrared lasers
GaSb-based lasers
Online Access:http://www.mdpi.com/2072-666X/10/3/188
Description
Summary:We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.
ISSN:2072-666X

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