Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate

Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate

A silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM). We have visualized a metastable crystalline SiO2...

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Main Authors: Koji Kimoto, Hiroki Tanaka, Daisuke Matsushita, Kosuke Tatsumura, Shiro Takeno
Format: Article
Language:English
Published: AIP Publishing LLC 2012-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4768269
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spelling doaj-54d226cd5f68489eaac04c492ae8f05c2020-11-24T21:27:46ZengAIP Publishing LLCAIP Advances2158-32262012-12-0124042144042144-510.1063/1.4768269045204ADVMetastable ultrathin crystal in thermally grown SiO2 film on Si substrateKoji Kimoto0Hiroki Tanaka1Daisuke Matsushita2Kosuke Tatsumura3Shiro Takeno4National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanCorporate R&D Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanCorporate R&D Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanCorporate R&D Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanCorporate R&D Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanA silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM). We have visualized a metastable crystalline SiO2 layer near a silicon substrate, which was not revealed in previous studies probably due to the vitrification caused by electron irradiation. Our experimental results also suggest a crystallographic nature of various surface oxides.http://dx.doi.org/10.1063/1.4768269
collection DOAJ
language English
format Article
sources DOAJ
author Koji Kimoto
Hiroki Tanaka
Daisuke Matsushita
Kosuke Tatsumura
Shiro Takeno
spellingShingle Koji Kimoto
Hiroki Tanaka
Daisuke Matsushita
Kosuke Tatsumura
Shiro Takeno
Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
AIP Advances
author_facet Koji Kimoto
Hiroki Tanaka
Daisuke Matsushita
Kosuke Tatsumura
Shiro Takeno
author_sort Koji Kimoto
title Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
title_short Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
title_full Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
title_fullStr Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
title_full_unstemmed Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
title_sort metastable ultrathin crystal in thermally grown sio2 film on si substrate
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2012-12-01
description A silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM). We have visualized a metastable crystalline SiO2 layer near a silicon substrate, which was not revealed in previous studies probably due to the vitrification caused by electron irradiation. Our experimental results also suggest a crystallographic nature of various surface oxides.
url http://dx.doi.org/10.1063/1.4768269
work_keys_str_mv AT kojikimoto metastableultrathincrystalinthermallygrownsio2filmonsisubstrate
AT hirokitanaka metastableultrathincrystalinthermallygrownsio2filmonsisubstrate
AT daisukematsushita metastableultrathincrystalinthermallygrownsio2filmonsisubstrate
AT kosuketatsumura metastableultrathincrystalinthermallygrownsio2filmonsisubstrate
AT shirotakeno metastableultrathincrystalinthermallygrownsio2filmonsisubstrate
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