Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse

Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse

In this paper, the resistive switching characteristics in a Ti/HfO<sub>2</sub>: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the...

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Bibliographic Details
Main Authors:	Jinfu Lin, Shulong Wang, Hongxia Liu
Format:	Article
Language:	English
Published:	MDPI AG 2021-03-01
Series:	Electronics
Subjects:	Al-doped HfO<sub>2</sub> gradual set switching multi-level resistance RRAM
Online Access:	https://www.mdpi.com/2079-9292/10/6/731

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