Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse

Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse

In this paper, the resistive switching characteristics in a Ti/HfO<sub>2</sub>: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the...

Full description

Bibliographic Details
Main Authors: Jinfu Lin, Shulong Wang, Hongxia Liu
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Electronics
Subjects:
Al-doped HfO<sub>2</sub>
gradual set switching
multi-level resistance
RRAM
Online Access:https://www.mdpi.com/2079-9292/10/6/731
id doaj-546c991df2e14210a70a5202c901b647
record_format Article
spelling doaj-546c991df2e14210a70a5202c901b6472021-03-20T00:03:13ZengMDPI AGElectronics2079-92922021-03-011073173110.3390/electronics10060731Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set PulseJinfu Lin0Shulong Wang1Hongxia Liu2Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, the resistive switching characteristics in a Ti/HfO<sub>2</sub>: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the same time, it was found that the variation in switching parameters in resistive random-access memory (RRAM) under impulse response is impacted by the initial conductance states. The device was brought to a preset resistance value range by energizing a single voltage amplitude pulse with a different number of periodicities. This is an efficient and simple programming algorithm to simulate the strength change observed in biological synapses. It exhibited an on/off of about 100, an endurance of over 500 cycles, and a lifetime (at 85 °C) of around 10<sup>5</sup> s. This multi-level switching two-terminal device can be used for neuromorphic applications to simulate the gradual potentiation (increasing conductance) and inhibition (decreasing conductance) in an artificial synapse.https://www.mdpi.com/2079-9292/10/6/731Al-doped HfO<sub>2</sub>gradual set switchingmulti-level resistanceRRAM
collection DOAJ
language English
format Article
sources DOAJ
author Jinfu Lin
Shulong Wang
Hongxia Liu
spellingShingle Jinfu Lin
Shulong Wang
Hongxia Liu
Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse
Electronics
Al-doped HfO<sub>2</sub>
gradual set switching
multi-level resistance
RRAM
author_facet Jinfu Lin
Shulong Wang
Hongxia Liu
author_sort Jinfu Lin
title Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse
title_short Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse
title_full Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse
title_fullStr Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse
title_full_unstemmed Multi-Level Switching of Al-Doped HfO<sub>2</sub> RRAM with a Single Voltage Amplitude Set Pulse
title_sort multi-level switching of al-doped hfo<sub>2</sub> rram with a single voltage amplitude set pulse
publisher MDPI AG
series Electronics
issn 2079-9292
publishDate 2021-03-01
description In this paper, the resistive switching characteristics in a Ti/HfO<sub>2</sub>: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the same time, it was found that the variation in switching parameters in resistive random-access memory (RRAM) under impulse response is impacted by the initial conductance states. The device was brought to a preset resistance value range by energizing a single voltage amplitude pulse with a different number of periodicities. This is an efficient and simple programming algorithm to simulate the strength change observed in biological synapses. It exhibited an on/off of about 100, an endurance of over 500 cycles, and a lifetime (at 85 °C) of around 10<sup>5</sup> s. This multi-level switching two-terminal device can be used for neuromorphic applications to simulate the gradual potentiation (increasing conductance) and inhibition (decreasing conductance) in an artificial synapse.
topic Al-doped HfO<sub>2</sub>
gradual set switching
multi-level resistance
RRAM
url https://www.mdpi.com/2079-9292/10/6/731
work_keys_str_mv AT jinfulin multilevelswitchingofaldopedhfosub2subrramwithasinglevoltageamplitudesetpulse
AT shulongwang multilevelswitchingofaldopedhfosub2subrramwithasinglevoltageamplitudesetpulse
AT hongxialiu multilevelswitchingofaldopedhfosub2subrramwithasinglevoltageamplitudesetpulse
_version_ 1724212444274884608

Similar Items