The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0–100%) on the films’ optoelectronic properties was investigated. In our experimental conditio...

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Bibliographic Details
Main Authors:	Hui Sun, Sheng-Chi Chen, Wen-Chi Peng, Chao-Kuang Wen, Xin Wang, Tung-Han Chuang
Format:	Article
Language:	English
Published:	MDPI AG 2018-04-01
Series:	Coatings
Subjects:	NiO thin films optoelectronic properties oxygen flow ratio ion source assisted sputtering p-type conduction
Online Access:	http://www.mdpi.com/2079-6412/8/5/168

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