Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS

Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced...

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Bibliographic Details
Main Authors: Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong, Shich-Chuan Wu
Format: Article
Language:English
Published: MDPI AG 2016-03-01
Series:Sensors
Subjects:
NVM
Online Access:http://www.mdpi.com/1424-8220/16/4/450