Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme
The modern trend of decarbonization has encouraged intensive research on renewable energy (RE)-based distributed power generation (DG) and smart grid, where advanced electronic power interfaces are necessary for connecting the generator with power grids and various electrical systems. On the other h...
Main Authors: | Chao-Tsung Ma, Zhen-Huang Gu |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-04-01
|
Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/12/4/464 |
Similar Items
-
Advanced processing for scaled depletion and enhancement-mode AlGaN/GaN HEMTs
by: Schuette, Michael L.
Published: (2010) -
Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications
by: Wei-Chih Cheng, et al.
Published: (2020-01-01) -
Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
by: Chao-Tsung Ma, et al.
Published: (2021-01-01) -
Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air
by: Saleh Kargarrazi, et al.
Published: (2019-01-01) -
Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study
by: Wei Lin, et al.
Published: (2021-04-01)