High temperature strain sensors based on gallium phosphide whiskers
The paper presents a study of tensoresistive characteristics of p-type GaP whiskers with [111] crystallographic orientation coinciding with the direction of the maximal piezoresistive effect for this material. The authors present a newly-developed technology of creating the ohmic contacts to GaP cry...
Main Authors: | Druzhinin A. O., Maryamova I. I., Kutrakov O. P. |
---|---|
Format: | Article |
Language: | English |
Published: |
Politehperiodika
2019-09-01
|
Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
Subjects: | |
Online Access: | http://www.tkea.com.ua/tkea/2019/3-4_2019/pdf/04.pdf |
Similar Items
-
Dual-function pressure-temperature sensor based on silicon whiskers
by: Druzhinin A. A., et al.
Published: (2013-06-01) -
High-temperature pressure sensors with strain gauges based on silicon whiskers
by: Druzhinin A. A., et al.
Published: (2012-12-01) -
Semiconductor whiskers for humidity sensors
by: I. P. Ostrovskii, et al.
Published: (2020-06-01) -
Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions
by: O. M. Hontaruk, et al.
Published: (2015-04-01) -
Sensor of hydrostatic pressure based on gallium antimonide microcrystals
by: Druzhinin A. A., et al.
Published: (2015-08-01)