Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures

A silicon-based monolithic laser has long been desired. Recent demonstration of lasing from direct bandgap group-IV alloy GeSn has opened up a completely new approach that is different from the traditional III-V integration on Si. In this study, high-quality GeSn samples were grown using a unique sp...

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Bibliographic Details
Main Authors: Wei Du, Quang M. Thai, Jeremie Chrétien, Mathieu Bertrand, Lara Casiez, Yiyin Zhou, Joe Margetis, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, John Tolle, Baohua Li, Shui-Qing Yu
Format: Article
Language:English
Published: Frontiers Media S.A. 2019-10-01
Series:Frontiers in Physics
Subjects:
Online Access:https://www.frontiersin.org/article/10.3389/fphy.2019.00147/full