Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Long carrier lifetimes are beneficial for graphene-based optoelectronics, but carrier recombination processes in graphene possess sub-picosecond characteristic times. Here, the authors report carrier lifetimes ~30 ps at low energy in graphene/hBN Zener-Klein transistors, attributed to interband Auge...

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Main Authors: P. Huang, E. Riccardi, S. Messelot, H. Graef, F. Valmorra, J. Tignon, T. Taniguchi, K. Watanabe, S. Dhillon, B. Plaçais, R. Ferreira, J. Mangeney
Format: Article
Language:English
Published: Nature Publishing Group 2020-02-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-020-14714-1
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spelling doaj-5237567f74614181b25bebee4a7106aa2021-05-11T08:25:08ZengNature Publishing GroupNature Communications2041-17232020-02-011111910.1038/s41467-020-14714-1Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illuminationP. Huang0E. Riccardi1S. Messelot2H. Graef3F. Valmorra4J. Tignon5T. Taniguchi6K. Watanabe7S. Dhillon8B. Plaçais9R. Ferreira10J. Mangeney11Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisAdvanced Materials Laboratory, National Institute for Materials ScienceAdvanced Materials Laboratory, National Institute for Materials ScienceLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne, Université, Université de ParisLong carrier lifetimes are beneficial for graphene-based optoelectronics, but carrier recombination processes in graphene possess sub-picosecond characteristic times. Here, the authors report carrier lifetimes ~30 ps at low energy in graphene/hBN Zener-Klein transistors, attributed to interband Auger processes.https://doi.org/10.1038/s41467-020-14714-1
collection DOAJ
language English
format Article
sources DOAJ
author P. Huang
E. Riccardi
S. Messelot
H. Graef
F. Valmorra
J. Tignon
T. Taniguchi
K. Watanabe
S. Dhillon
B. Plaçais
R. Ferreira
J. Mangeney
spellingShingle P. Huang
E. Riccardi
S. Messelot
H. Graef
F. Valmorra
J. Tignon
T. Taniguchi
K. Watanabe
S. Dhillon
B. Plaçais
R. Ferreira
J. Mangeney
Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
Nature Communications
author_facet P. Huang
E. Riccardi
S. Messelot
H. Graef
F. Valmorra
J. Tignon
T. Taniguchi
K. Watanabe
S. Dhillon
B. Plaçais
R. Ferreira
J. Mangeney
author_sort P. Huang
title Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_short Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_full Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_fullStr Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_full_unstemmed Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
title_sort ultra-long carrier lifetime in neutral graphene-hbn van der waals heterostructures under mid-infrared illumination
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2020-02-01
description Long carrier lifetimes are beneficial for graphene-based optoelectronics, but carrier recombination processes in graphene possess sub-picosecond characteristic times. Here, the authors report carrier lifetimes ~30 ps at low energy in graphene/hBN Zener-Klein transistors, attributed to interband Auger processes.
url https://doi.org/10.1038/s41467-020-14714-1
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