Improving photoresponsivity in GaAs film grown on Al-induced-crystallized Ge on an insulator
The highest recorded photoresponsivity in polycrystalline GaAs films on glass has been updated by precisely controlling the growth temperature of GaAs on a Ge seed layer formed by Al-induced layer exchange. X-ray diffraction and electron backscatter diffraction analyses showed that large-grained (&g...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5138677 |