Atomically interface engineered micrometer-thick SrMoO3 oxide electrodes for thin-film BaxSr1-xTiO3 ferroelectric varactors tunable at low voltages
In the field of oxide electronics, there has been tremendous progress in the recent years in atomic engineering of functional oxide thin films with controlled interfaces at the unit cell level. However, some relevant devices such as tunable ferroelectric microwave capacitors (varactors) based on Bax...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5094855 |