Analysis of Random Variation in Subthreshold FGMOSFET
The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (ID), has been proposed in this r...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2016-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2016/3741250 |