The demonstration of a D-SMT stressor on Ge planer n-MOSFETs
An approximately 31% Id,sat improvement and 42% mobility enhancement are achieved on the planer Ge n-Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) by implementing the dislocation-stress memorization technology (D-SMT) stressor for the first time, based on an investigation of crystal r...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4919624 |