The demonstration of a D-SMT stressor on Ge planer n-MOSFETs
An approximately 31% Id,sat improvement and 42% mobility enhancement are achieved on the planer Ge n-Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) by implementing the dislocation-stress memorization technology (D-SMT) stressor for the first time, based on an investigation of crystal r...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4919624 |
| Summary: | An approximately 31% Id,sat improvement and 42% mobility enhancement are achieved on the planer Ge n-Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) by implementing the dislocation-stress memorization technology (D-SMT) stressor for the first time, based on an investigation of crystal re-growth velocities along different directions and the optimization of the dislocation angle (θ) in Ge. Ultra-high stress (>3 GPa) capping SiN film is found to be essential for modifying the crystal re-growth velocities along the [100] and [110] directions to optimize the θ. The change of crystal re-growth velocities and the mobility enhancement ratio with the stress along the assigned directions in Ge is also discussed, respectively. |
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| ISSN: | 2158-3226 |