| Summary: | Barrier height (<inline-formula> <tex-math notation="LaTeX">$\phi _{b}$ </tex-math></inline-formula>), trap state, bandgap (<inline-formula> <tex-math notation="LaTeX">$E_{g}$ </tex-math></inline-formula>), and band alignment information of the metal–ZrO<sub>2</sub>–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V characteristics obtained before and after rapid thermal annealing, origin and transformation of defect states have been successfully investigated. Our analysis revealed that deep-level defects originating from oxygen vacancies near the top electrode are causing of leakage current in MIM capacitor and these defects can be effectively reduced by a proper thermal annealing.
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