Annealing effects on the properties of TiN thin films
The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of ∼8 nm/min. After deposition the samples were annealed for 1 h at 600 °C an...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Novi Sad
2015-06-01
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| Series: | Processing and Application of Ceramics |
| Subjects: | |
| Online Access: | http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2028%2001.pdf |