Development of nitride-sensors for monitoring in control systems
Sensors become integrated through the control condition arrangement, either for visual, mechanical, biological, or chemical applications. New stuff is designed for detection, such as Diluted Magnetic Semiconductors (DMS), which are considered attractive candidates that consist of traditional 111- V,...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
JVE International
2020-09-01
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| Series: | Journal of Measurements in Engineering |
| Subjects: | |
| Online Access: | https://www.jvejournals.com/article/21384 |
| Summary: | Sensors become integrated through the control condition arrangement, either for visual, mechanical, biological, or chemical applications. New stuff is designed for detection, such as Diluted Magnetic Semiconductors (DMS), which are considered attractive candidates that consist of traditional 111- V, II-VI, or group IV semiconductors. Manganese Mn-doped GaN (Mn.Gac.N) epitaxial velum has unique magnetic, visual and chemical properties for the control of systems intelligently in detector design. The subject area of the magnetic properties of MnxGal-xN is on a large scale available; there are only a few studies on the visual properties and electrochemical properties of MnxGal-xN epitaxial velums. Where MnGaN velums were used in spintronic and opto-electronic applications according to their magnetic characterization and constructed MnGaN electrodes have drop-fabric potentials for potentiometric sensor applications, since they have good performance as ion-selective electrodes. The electrical and magnetic properties that allow the control of electron spin as well as compliant period, makes the materials ideal for spintronic applications. Designing such spintronic and optoelectronic devices based on MnxGal-xN requires a broader agreement of physical, visual, electrical and chemical properties of epitaxial velums that are still seldom found in the literature. This bailiwick displays the potential use of MnGaN semiconductor as an all solid-state potentiometric sensor for measuring anions in solutions in the control-engineering field. |
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| ISSN: | 2335-2124 2424-4635 |