Determination of the interface between amorphous insulator and crystalline 4H–SiC in transmission electron microscope image by using convolutional neural network
A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC metal-oxide-semiconductor field-effect transistors. To evaluate the mobility by interface roughness, we drew a boundary line between an amorphous insulator and crystalline 4H–SiC in a cross-secti...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0036982 |