Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits

In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices...

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Main Authors: Evseev Vladimir, Ivlev Mikhail, Lupanova Elena, Nikulin Sergey, Petrov Vitaliy, Terentyev Andrey
Format: Article
Language:English
Published: EDP Sciences 2019-01-01
Series:ITM Web of Conferences
Online Access:https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_11002.pdf
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spelling doaj-506c0a76e5044b53ba52fa6e9b388dc42021-02-02T03:29:03ZengEDP SciencesITM Web of Conferences2271-20972019-01-01301100210.1051/itmconf/20193011002itmconf_crimico2019_11002Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuitsEvseev Vladimir0Ivlev Mikhail1Lupanova Elena2Nikulin SergeyPetrov Vitaliy3Terentyev Andrey4Arzamas Engineering Design Bureau LLCAlekseev Nizhny Novgorod State Technical UniversityAlekseev Nizhny Novgorod State Technical UniversityAlekseev Nizhny Novgorod State Technical UniversityRapid Telecom Systems Labs LLCIn the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternative solution adapted to the operation of the transistor in real conditions and allowing to design the output stages of microwave power amplifiers using analysis and optimization of linear electrical circuits. The essence of the proposed solution is to automate the measurement of non-linear S-parameters of high-power microwave transistors in a contact device with tunable strip matching circuits for various DC supply voltage, frequency and input power mode in case of continuous or pulse input signal. The nonlinear S-parameters of the contact device are measured using the method of spatially remote variable load in the frequency range, in which the line conditioning and the maximum output power are achieved. The minimum of the reflected wave amplitude and the maximum gain are reached using movable strip matching transformers. The S-parameters measured in the coaxial line are automatically recalculated to the physical boundaries of the transistor by registering the positions of the input and output strip transformers.https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_11002.pdf
collection DOAJ
language English
format Article
sources DOAJ
author Evseev Vladimir
Ivlev Mikhail
Lupanova Elena
Nikulin Sergey
Petrov Vitaliy
Terentyev Andrey
spellingShingle Evseev Vladimir
Ivlev Mikhail
Lupanova Elena
Nikulin Sergey
Petrov Vitaliy
Terentyev Andrey
Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits
ITM Web of Conferences
author_facet Evseev Vladimir
Ivlev Mikhail
Lupanova Elena
Nikulin Sergey
Petrov Vitaliy
Terentyev Andrey
author_sort Evseev Vladimir
title Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits
title_short Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits
title_full Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits
title_fullStr Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits
title_full_unstemmed Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits
title_sort automation of s-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits
publisher EDP Sciences
series ITM Web of Conferences
issn 2271-2097
publishDate 2019-01-01
description In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternative solution adapted to the operation of the transistor in real conditions and allowing to design the output stages of microwave power amplifiers using analysis and optimization of linear electrical circuits. The essence of the proposed solution is to automate the measurement of non-linear S-parameters of high-power microwave transistors in a contact device with tunable strip matching circuits for various DC supply voltage, frequency and input power mode in case of continuous or pulse input signal. The nonlinear S-parameters of the contact device are measured using the method of spatially remote variable load in the frequency range, in which the line conditioning and the maximum output power are achieved. The minimum of the reflected wave amplitude and the maximum gain are reached using movable strip matching transformers. The S-parameters measured in the coaxial line are automatically recalculated to the physical boundaries of the transistor by registering the positions of the input and output strip transformers.
url https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_11002.pdf
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