Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law...
Main Author: | |
---|---|
Format: | Article |
Language: | English |
Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2019-06-01
|
Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
Subjects: | |
Online Access: | http://journal-spqeo.org.ua/n2_2019/P188-192abstr.html |
id |
doaj-50623fd5a9ae49329f84ce4de72f31f5 |
---|---|
record_format |
Article |
spelling |
doaj-50623fd5a9ae49329f84ce4de72f31f52020-11-25T02:50:33ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics. Semiconductor Physics, Quantum Electronics & Optoelectronics 1560-80341605-65822019-06-0122218819210.15407/spqeo22.02.188Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure I.B. Sapaev0Physical-Technical Institute, Scientific Association “Physics – Sun”, Uzbekistan Academy of Sciences, 2B, Bodomzor Yuli str., 100084 Tashkent, Uzbekistan The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive. http://journal-spqeo.org.ua/n2_2019/P188-192abstr.htmlinjectioncurrent-voltagedefect-impurity complexesbipolar drift lengthbipolar diffusion length |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
I.B. Sapaev |
spellingShingle |
I.B. Sapaev Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure Semiconductor Physics, Quantum Electronics & Optoelectronics injection current-voltage defect-impurity complexes bipolar drift length bipolar diffusion length |
author_facet |
I.B. Sapaev |
author_sort |
I.B. Sapaev |
title |
Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure |
title_short |
Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure |
title_full |
Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure |
title_fullStr |
Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure |
title_full_unstemmed |
Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure |
title_sort |
current-voltage characteristic of the injection photodetector based on in–n-cds–p-si–in structure |
publisher |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
series |
Semiconductor Physics, Quantum Electronics & Optoelectronics |
issn |
1560-8034 1605-6582 |
publishDate |
2019-06-01 |
description |
The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive. |
topic |
injection current-voltage defect-impurity complexes bipolar drift length bipolar diffusion length |
url |
http://journal-spqeo.org.ua/n2_2019/P188-192abstr.html |
work_keys_str_mv |
AT ibsapaev currentvoltagecharacteristicoftheinjectionphotodetectorbasedoninncdspsiinstructure |
_version_ |
1724737876021739520 |