Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law...

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Main Author: I.B. Sapaev
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2019-06-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
Online Access:http://journal-spqeo.org.ua/n2_2019/P188-192abstr.html
id doaj-50623fd5a9ae49329f84ce4de72f31f5
record_format Article
spelling doaj-50623fd5a9ae49329f84ce4de72f31f52020-11-25T02:50:33ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics. Semiconductor Physics, Quantum Electronics & Optoelectronics 1560-80341605-65822019-06-0122218819210.15407/spqeo22.02.188Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure I.B. Sapaev0Physical-Technical Institute, Scientific Association “Physics – Sun”, Uzbekistan Academy of Sciences, 2B, Bodomzor Yuli str., 100084 Tashkent, Uzbekistan The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive. http://journal-spqeo.org.ua/n2_2019/P188-192abstr.htmlinjectioncurrent-voltagedefect-impurity complexesbipolar drift lengthbipolar diffusion length
collection DOAJ
language English
format Article
sources DOAJ
author I.B. Sapaev
spellingShingle I.B. Sapaev
Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
Semiconductor Physics, Quantum Electronics & Optoelectronics
injection
current-voltage
defect-impurity complexes
bipolar drift length
bipolar diffusion length
author_facet I.B. Sapaev
author_sort I.B. Sapaev
title Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
title_short Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
title_full Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
title_fullStr Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
title_full_unstemmed Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
title_sort current-voltage characteristic of the injection photodetector based on in–n-cds–p-si–in structure
publisher National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
series Semiconductor Physics, Quantum Electronics & Optoelectronics
issn 1560-8034
1605-6582
publishDate 2019-06-01
description The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive.
topic injection
current-voltage
defect-impurity complexes
bipolar drift length
bipolar diffusion length
url http://journal-spqeo.org.ua/n2_2019/P188-192abstr.html
work_keys_str_mv AT ibsapaev currentvoltagecharacteristicoftheinjectionphotodetectorbasedoninncdspsiinstructure
_version_ 1724737876021739520