Potential of silicon carbide MOSFETs in the DC/DC converters for future HVDC offshore wind farms

• Main Authors: Thomas Lagier, Philippe Ladoux, Piotr Dworakowski
• Format: Article
• Language: English
• Published: Wiley 2017-07-01
• Series: High Voltage
• Subjects: DC-DC power convertors; silicon compounds; wide band gap semiconductors; MOSFET; HVDC power convertors; offshore installations; wind power plants; insulated gate bipolar transistors; Si; SiC; converter energy loss; silicon insulated-gate bipolar transistor; modular architectures; metal-oxide-semiconductor field-effect transistors; full DC off-shore wind farm; high-voltage direct current offshore wind farms; future HVDC offshore wind farms; DC-DC converters; silicon carbide MOSFET power modules
• Online Access: https://digital-library.theiet.org/content/journals/10.1049/hve.2017.0070

High-voltage direct current (HVDC) is more and more often implemented for long distance electrical energy transmission, especially for off-shore wind farms. In this study, a full DC off-shore wind farm, which requires a high-power and high-voltage DC/DC converter, is considered. In order to reduce the size of the converter, the trend is to increase operating frequency. Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are becoming industrially available and give scope for the realisation of high-performance DC/DC converters based on modular architectures. This study presents a prospective analysis of the potential of such devices in HVDC power systems. Considering the characteristics of Si insulated-gate bipolar transistor and SiC MOSFET power modules, two DC/DC converter topologies are compared in terms of losses and number of components. In conclusion, a study of the efficiency based on converter energy loss is presented.