A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor
This paper presents an electrochemical seismic sensor in which paraylene was used as a substrate and insulating layer of micro-fabricated electrodes, enabling the detection of seismic signals with enhanced sensitivities in comparison to silicon-based counterparts. Based on microfabrication, paralene...
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doaj-500b5db136b64fca99e4dd021b4eb8f12020-11-24T21:06:13ZengMDPI AGSensors1424-82202018-04-01184116510.3390/s18041165s18041165A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic SensorGuanglei Li0Zhenyuan Sun1Junbo Wang2Deyong Chen3Jian Chen4Lianhong Chen5Chao Xu6Wenjie Qi7Yu Zheng8University of Chinese Academy of Sciences, Beijing 100049, ChinaTsinghua University, Beijing 100084, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, ChinaAffiliated High School of Peking University, Beijing 100080, ChinaThis paper presents an electrochemical seismic sensor in which paraylene was used as a substrate and insulating layer of micro-fabricated electrodes, enabling the detection of seismic signals with enhanced sensitivities in comparison to silicon-based counterparts. Based on microfabrication, paralene-based electrochemical seismic sensors were fabricated in which the thickness of the insulating spacer was 6.7 μm. Compared to silicon-based counterparts with ~100 μm insulating layers, the parylene-based devices produced higher sensitivities of 490.3 ± 6.1 V/(m/s) vs. 192.2 ± 1.9 V/(m/s) at 0.1 Hz, 4764.4 ± 18 V/(m/s) vs. 318.9 ± 6.5 V/(m/s) at 1 Hz, and 4128.1 ± 38.3 V/(m/s) vs. 254.5 ± 4.2 V/(m/s) at 10 Hz. In addition, the outputs of the parylene vs. silicon devices in response to two transit inputs were compared, producing peak responses of 2.97 V vs. 0.22 V and 2.41 V vs. 0.19 V, respectively. Furthermore, the self-noises of parylene vs. silicon-based devices were compared as follows: −82.3 ± 3.9 dB vs. −90.4 ± 9.4 dB at 0.1 Hz, −75.7 ± 7.3 dB vs. −98.2 ± 9.9 dB at 1 Hz, and −62.4 ± 7.7 dB vs. −91.1 ± 8.1 dB at 10 Hz. The developed parylene-based electrochemical seismic sensors may function as an enabling technique for further detection of seismic motions in various applications.http://www.mdpi.com/1424-8220/18/4/1165electrochemical seismic sensorparylene substratesensitivity increasingnoise level |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Guanglei Li Zhenyuan Sun Junbo Wang Deyong Chen Jian Chen Lianhong Chen Chao Xu Wenjie Qi Yu Zheng |
spellingShingle |
Guanglei Li Zhenyuan Sun Junbo Wang Deyong Chen Jian Chen Lianhong Chen Chao Xu Wenjie Qi Yu Zheng A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor Sensors electrochemical seismic sensor parylene substrate sensitivity increasing noise level |
author_facet |
Guanglei Li Zhenyuan Sun Junbo Wang Deyong Chen Jian Chen Lianhong Chen Chao Xu Wenjie Qi Yu Zheng |
author_sort |
Guanglei Li |
title |
A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor |
title_short |
A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor |
title_full |
A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor |
title_fullStr |
A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor |
title_full_unstemmed |
A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor |
title_sort |
flexible sensing unit manufacturing method of electrochemical seismic sensor |
publisher |
MDPI AG |
series |
Sensors |
issn |
1424-8220 |
publishDate |
2018-04-01 |
description |
This paper presents an electrochemical seismic sensor in which paraylene was used as a substrate and insulating layer of micro-fabricated electrodes, enabling the detection of seismic signals with enhanced sensitivities in comparison to silicon-based counterparts. Based on microfabrication, paralene-based electrochemical seismic sensors were fabricated in which the thickness of the insulating spacer was 6.7 μm. Compared to silicon-based counterparts with ~100 μm insulating layers, the parylene-based devices produced higher sensitivities of 490.3 ± 6.1 V/(m/s) vs. 192.2 ± 1.9 V/(m/s) at 0.1 Hz, 4764.4 ± 18 V/(m/s) vs. 318.9 ± 6.5 V/(m/s) at 1 Hz, and 4128.1 ± 38.3 V/(m/s) vs. 254.5 ± 4.2 V/(m/s) at 10 Hz. In addition, the outputs of the parylene vs. silicon devices in response to two transit inputs were compared, producing peak responses of 2.97 V vs. 0.22 V and 2.41 V vs. 0.19 V, respectively. Furthermore, the self-noises of parylene vs. silicon-based devices were compared as follows: −82.3 ± 3.9 dB vs. −90.4 ± 9.4 dB at 0.1 Hz, −75.7 ± 7.3 dB vs. −98.2 ± 9.9 dB at 1 Hz, and −62.4 ± 7.7 dB vs. −91.1 ± 8.1 dB at 10 Hz. The developed parylene-based electrochemical seismic sensors may function as an enabling technique for further detection of seismic motions in various applications. |
topic |
electrochemical seismic sensor parylene substrate sensitivity increasing noise level |
url |
http://www.mdpi.com/1424-8220/18/4/1165 |
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