High-field spatial imaging of charge transport in silicon at low temperature
We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111]...
Main Authors: | C. Stanford, R. A. Moffatt, N. A. Kurinsky, P. L. Brink, B. Cabrera, M. Cherry, F. Insulla, M. Kelsey, F. Ponce, K. Sundqvist, S. Yellin, B. A. Young |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-02-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5131171 |
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