High-field spatial imaging of charge transport in silicon at low temperature

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111]...

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Bibliographic Details
Main Authors: C. Stanford, R. A. Moffatt, N. A. Kurinsky, P. L. Brink, B. Cabrera, M. Cherry, F. Insulla, M. Kelsey, F. Ponce, K. Sundqvist, S. Yellin, B. A. Young
Format: Article
Language:English
Published: AIP Publishing LLC 2020-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5131171

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