High-field spatial imaging of charge transport in silicon at low temperature

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111]...

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Main Authors:	C. Stanford, R. A. Moffatt, N. A. Kurinsky, P. L. Brink, B. Cabrera, M. Cherry, F. Insulla, M. Kelsey, F. Ponce, K. Sundqvist, S. Yellin, B. A. Young
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5131171

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spelling	doaj-4ff8f4f277db4035b519249d8bc519aa2020-11-25T03:30:33ZengAIP Publishing LLCAIP Advances2158-32262020-02-01102025316025316-610.1063/1.5131171High-field spatial imaging of charge transport in silicon at low temperatureC. Stanford0R. A. Moffatt1N. A. Kurinsky2P. L. Brink3B. Cabrera4M. Cherry5F. Insulla6M. Kelsey7F. Ponce8K. Sundqvist9S. Yellin10B. A. Young11Department of Physics, Stanford University, Stanford, California 94305, USADepartment of Physics, Stanford University, Stanford, California 94305, USAFermi National Accelerator Laboratory, Center for Particle Astrophysics, Batavia, Illinois 60510, USASLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USADepartment of Physics, Stanford University, Stanford, California 94305, USASLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USADepartment of Physics, Stanford University, Stanford, California 94305, USASLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USADepartment of Physics, Stanford University, Stanford, California 94305, USADepartment of Physics, San Diego State University, San Diego, California 92182, USADepartment of Physics, Stanford University, Stanford, California 94305, USADepartment of Physics, Santa Clara University, Santa Clara, California 95053, USAWe present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. We also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.http://dx.doi.org/10.1063/1.5131171
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	C. Stanford R. A. Moffatt N. A. Kurinsky P. L. Brink B. Cabrera M. Cherry F. Insulla M. Kelsey F. Ponce K. Sundqvist S. Yellin B. A. Young
spellingShingle	C. Stanford R. A. Moffatt N. A. Kurinsky P. L. Brink B. Cabrera M. Cherry F. Insulla M. Kelsey F. Ponce K. Sundqvist S. Yellin B. A. Young High-field spatial imaging of charge transport in silicon at low temperature AIP Advances
author_facet	C. Stanford R. A. Moffatt N. A. Kurinsky P. L. Brink B. Cabrera M. Cherry F. Insulla M. Kelsey F. Ponce K. Sundqvist S. Yellin B. A. Young
author_sort	C. Stanford
title	High-field spatial imaging of charge transport in silicon at low temperature
title_short	High-field spatial imaging of charge transport in silicon at low temperature
title_full	High-field spatial imaging of charge transport in silicon at low temperature
title_fullStr	High-field spatial imaging of charge transport in silicon at low temperature
title_full_unstemmed	High-field spatial imaging of charge transport in silicon at low temperature
title_sort	high-field spatial imaging of charge transport in silicon at low temperature
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2020-02-01
description	We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. We also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.
url	http://dx.doi.org/10.1063/1.5131171
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High-field spatial imaging of charge transport in silicon at low temperature

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