Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
Abstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fi...
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2017-07-01
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Online Access: | https://doi.org/10.1038/s41598-017-06043-z |
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doaj-4f79a6f4b25448c5bc18011b34a92ee92020-12-08T03:06:45ZengNature Publishing GroupScientific Reports2045-23222017-07-01711810.1038/s41598-017-06043-zMonolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free GarnetCui Zhang0Prabesh Dulal1Bethanie J. H. Stadler2David C. Hutchings3School of Engineering, University of GlasgowChemical Engineering and Materials Science, University of MinnesotaChemical Engineering and Materials Science, University of MinnesotaSchool of Engineering, University of GlasgowAbstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.https://doi.org/10.1038/s41598-017-06043-z |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Cui Zhang Prabesh Dulal Bethanie J. H. Stadler David C. Hutchings |
spellingShingle |
Cui Zhang Prabesh Dulal Bethanie J. H. Stadler David C. Hutchings Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet Scientific Reports |
author_facet |
Cui Zhang Prabesh Dulal Bethanie J. H. Stadler David C. Hutchings |
author_sort |
Cui Zhang |
title |
Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet |
title_short |
Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet |
title_full |
Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet |
title_fullStr |
Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet |
title_full_unstemmed |
Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet |
title_sort |
monolithically-integrated te-mode 1d silicon-on-insulator isolators using seedlayer-free garnet |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2017-07-01 |
description |
Abstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB. |
url |
https://doi.org/10.1038/s41598-017-06043-z |
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