Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet

Abstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fi...

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Main Authors: Cui Zhang, Prabesh Dulal, Bethanie J. H. Stadler, David C. Hutchings
Format: Article
Language:English
Published: Nature Publishing Group 2017-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-06043-z
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spelling doaj-4f79a6f4b25448c5bc18011b34a92ee92020-12-08T03:06:45ZengNature Publishing GroupScientific Reports2045-23222017-07-01711810.1038/s41598-017-06043-zMonolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free GarnetCui Zhang0Prabesh Dulal1Bethanie J. H. Stadler2David C. Hutchings3School of Engineering, University of GlasgowChemical Engineering and Materials Science, University of MinnesotaChemical Engineering and Materials Science, University of MinnesotaSchool of Engineering, University of GlasgowAbstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.https://doi.org/10.1038/s41598-017-06043-z
collection DOAJ
language English
format Article
sources DOAJ
author Cui Zhang
Prabesh Dulal
Bethanie J. H. Stadler
David C. Hutchings
spellingShingle Cui Zhang
Prabesh Dulal
Bethanie J. H. Stadler
David C. Hutchings
Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
Scientific Reports
author_facet Cui Zhang
Prabesh Dulal
Bethanie J. H. Stadler
David C. Hutchings
author_sort Cui Zhang
title Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_short Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_full Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_fullStr Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_full_unstemmed Monolithically-Integrated TE-mode 1D Silicon-on-Insulator Isolators using Seedlayer-Free Garnet
title_sort monolithically-integrated te-mode 1d silicon-on-insulator isolators using seedlayer-free garnet
publisher Nature Publishing Group
series Scientific Reports
issn 2045-2322
publishDate 2017-07-01
description Abstract The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.
url https://doi.org/10.1038/s41598-017-06043-z
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