Transient photoreflectance of AlInN/GaN heterostructures

Transient photoreflectance of AlInN/GaN heterostructures

Time-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond decay. Such ultrafast carrier relaxation from the...

Full description

Bibliographic Details
Main Authors: S. Marcinkevičius, V. Liuolia, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, M. S. Shur
Format: Article
Language:English
Published: AIP Publishing LLC 2012-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4768670
id doaj-4f72ca892601432a95448cb68074c4c2
record_format Article
spelling doaj-4f72ca892601432a95448cb68074c4c22020-11-24T21:56:14ZengAIP Publishing LLCAIP Advances2158-32262012-12-0124042148042148-710.1063/1.4768670049204ADVTransient photoreflectance of AlInN/GaN heterostructuresS. Marcinkevičius0V. Liuolia1D. Billingsley2M. Shatalov3J. Yang4R. Gaska5M. S. Shur6KTH Royal Institute of Technology, Department of Materials and Nanophysics, Electrum 229, 16440 Kista, SwedenKTH Royal Institute of Technology, Department of Materials and Nanophysics, Electrum 229, 16440 Kista, SwedenSensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209, USASensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209, USASensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209, USASensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209, USADepartment of Electrical, Computer, and Systems Engineering, and Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, USATime-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond decay. Such ultrafast carrier relaxation from the extended to the sub-band edge states implies that the localization sites are small and dense, most probably originating from the In-rich clusters. At energies below the AlInN band gap, a complicated energy dependence of the PR signal is attributed to the properties of the localized states and to the modulation of the interface electric field by photoexcitation.http://dx.doi.org/10.1063/1.4768670
collection DOAJ
language English
format Article
sources DOAJ
author S. Marcinkevičius
V. Liuolia
D. Billingsley
M. Shatalov
J. Yang
R. Gaska
M. S. Shur
spellingShingle S. Marcinkevičius
V. Liuolia
D. Billingsley
M. Shatalov
J. Yang
R. Gaska
M. S. Shur
Transient photoreflectance of AlInN/GaN heterostructures
AIP Advances
author_facet S. Marcinkevičius
V. Liuolia
D. Billingsley
M. Shatalov
J. Yang
R. Gaska
M. S. Shur
author_sort S. Marcinkevičius
title Transient photoreflectance of AlInN/GaN heterostructures
title_short Transient photoreflectance of AlInN/GaN heterostructures
title_full Transient photoreflectance of AlInN/GaN heterostructures
title_fullStr Transient photoreflectance of AlInN/GaN heterostructures
title_full_unstemmed Transient photoreflectance of AlInN/GaN heterostructures
title_sort transient photoreflectance of alinn/gan heterostructures
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2012-12-01
description Time-resolved photoreflectance (PR) in AlInN/GaN heterostructures was applied to study carrier dynamics at energies extending from the uniform AlInN alloy band gap to the band gap of GaN. PR at the AlInN band gap has been found to have subpicosecond decay. Such ultrafast carrier relaxation from the extended to the sub-band edge states implies that the localization sites are small and dense, most probably originating from the In-rich clusters. At energies below the AlInN band gap, a complicated energy dependence of the PR signal is attributed to the properties of the localized states and to the modulation of the interface electric field by photoexcitation.
url http://dx.doi.org/10.1063/1.4768670
work_keys_str_mv AT smarcinkevicius transientphotoreflectanceofalinnganheterostructures
AT vliuolia transientphotoreflectanceofalinnganheterostructures
AT dbillingsley transientphotoreflectanceofalinnganheterostructures
AT mshatalov transientphotoreflectanceofalinnganheterostructures
AT jyang transientphotoreflectanceofalinnganheterostructures
AT rgaska transientphotoreflectanceofalinnganheterostructures
AT msshur transientphotoreflectanceofalinnganheterostructures
_version_ 1725859085366067200

Similar Items