A Study on Improving Switching Characteristics According to a Circuit Analysis Technique in Converter Applications Using Gallium Nitride Field Effect Transistors
In this paper, we studied how the switching characteristics of a power conversion system could be improved using gallium nitride (GaN) devices. To this end, a circuit system applying GaN field effect transistors (FETs) was modeled to derive a mathematical differential equation, and the transfer func...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-08-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/12/17/3280 |