Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of the ITO-ZnO/n-GaN system was lower than that of the ITO...

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Bibliographic Details
Main Authors: Wei-Hua Hsiao, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jyun-Yong Li, Hong-Jyun Lin, Nan-Jay Wu, Day-Shan Liu
Format: Article
Language:English
Published: MDPI AG 2016-02-01
Series:Applied Sciences
Subjects:
cosputtered ITO-ZnO
n-GaN
transparent electrode
Ti interlayer
ohmic contact
figure-of-merit
Online Access:http://www.mdpi.com/2076-3417/6/2/60

Internet

http://www.mdpi.com/2076-3417/6/2/60

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