Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030
The aim of the work is analyzing the results of an experimental research of a charge-sensitive amplifier with an adjustable conversion coefficient and a base level recovery circuit fabricated on the master slice array MN2XA030 for silicon photomultiplier tubes. The amplifier is called ADPreampl3. Th...
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-05-01
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doaj-4d9cc84cebf148afa60c1aeaec69d2f62021-07-28T16:19:58ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482020-05-01183818710.35596/1729-7648-2020-18-3-81-871593Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030O. V. Dvornikov0V. A. Tchekhovski1Ya. D. Galkin2A. V. Kunts3V. R. Stempitski4N. N. Prokopenko5Minsk Research Instrument-Making Institute JSC (MNIPI JSC)Institute for Nuclear Problems of Belarusian State UniversityInstitute for Nuclear Problems of Belarusian State University; Belarusian State University of Informatics and RadioelectronicsInstitute for Nuclear Problems of Belarusian State University; Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsDon State Technical University; Institute for Design Problems in Microelectronics of RASThe aim of the work is analyzing the results of an experimental research of a charge-sensitive amplifier with an adjustable conversion coefficient and a base level recovery circuit fabricated on the master slice array MN2XA030 for silicon photomultiplier tubes. The amplifier is called ADPreampl3. The parameters were measured on a small batch of chips in the amount of 20 samples. In the process of measuring the main parameters of the amplifier, the signal from the SiPM Photonique equivalent circuit was fed to the amplifier input. In the course of measuring the parameters, it was revealed that the spread of the baseline level for the FOut output ranged from -24 to 276 mV with an average value of 85.6 mV. In this case, a voltage changing in the FOoutShift node from -3 to 3 V is sufficient to establish a base level value of FOut output close to zero. When the recovery scheme is disabled, the spread of the basic level for OutA output is from 300 to 800 mV. When the OutAShift output is connected to the zero-voltage bus the average base level for OutA output is 3.72 mV and for OutAinv output it is minus 2.42 mV. The base level at the outputs OutA and OutAinv smoothly changes in the range of ± 0.9 V. At maximum gain, the dynamic range of ADPreampl3 exceeds 20 dB, however, at the same time, the conversion coefficient depends on the value of the input charge. To register large input charges, it is recommended to reduce the output pulse by reducing the voltage at the Gain pin or process the signal from the FOut pin. The output parameters of the experimental samples are compared with the results of computer simulation. The discrepancy between the results of modeling and measurements, peak time and propagation delays of the amplifier signal was revealed. Based on this, a decision to adjust the SPICE parameters of the elements used in the simulation was made.https://doklady.bsuir.by/jour/article/view/2672silicon photomultiplierreading electronicsmaster slice arraycharge-sensitive amplifier |
collection |
DOAJ |
language |
Russian |
format |
Article |
sources |
DOAJ |
author |
O. V. Dvornikov V. A. Tchekhovski Ya. D. Galkin A. V. Kunts V. R. Stempitski N. N. Prokopenko |
spellingShingle |
O. V. Dvornikov V. A. Tchekhovski Ya. D. Galkin A. V. Kunts V. R. Stempitski N. N. Prokopenko Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030 Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki silicon photomultiplier reading electronics master slice array charge-sensitive amplifier |
author_facet |
O. V. Dvornikov V. A. Tchekhovski Ya. D. Galkin A. V. Kunts V. R. Stempitski N. N. Prokopenko |
author_sort |
O. V. Dvornikov |
title |
Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030 |
title_short |
Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030 |
title_full |
Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030 |
title_fullStr |
Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030 |
title_full_unstemmed |
Analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal MN2XA030 |
title_sort |
analysis of the results of designing reading electronics of silicon photomultiplier tubes driven by the base matrix crystal mn2xa030 |
publisher |
Educational institution «Belarusian State University of Informatics and Radioelectronics» |
series |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
issn |
1729-7648 |
publishDate |
2020-05-01 |
description |
The aim of the work is analyzing the results of an experimental research of a charge-sensitive amplifier with an adjustable conversion coefficient and a base level recovery circuit fabricated on the master slice array MN2XA030 for silicon photomultiplier tubes. The amplifier is called ADPreampl3. The parameters were measured on a small batch of chips in the amount of 20 samples. In the process of measuring the main parameters of the amplifier, the signal from the SiPM Photonique equivalent circuit was fed to the amplifier input. In the course of measuring the parameters, it was revealed that the spread of the baseline level for the FOut output ranged from -24 to 276 mV with an average value of 85.6 mV. In this case, a voltage changing in the FOoutShift node from -3 to 3 V is sufficient to establish a base level value of FOut output close to zero. When the recovery scheme is disabled, the spread of the basic level for OutA output is from 300 to 800 mV. When the OutAShift output is connected to the zero-voltage bus the average base level for OutA output is 3.72 mV and for OutAinv output it is minus 2.42 mV. The base level at the outputs OutA and OutAinv smoothly changes in the range of ± 0.9 V. At maximum gain, the dynamic range of ADPreampl3 exceeds 20 dB, however, at the same time, the conversion coefficient depends on the value of the input charge. To register large input charges, it is recommended to reduce the output pulse by reducing the voltage at the Gain pin or process the signal from the FOut pin. The output parameters of the experimental samples are compared with the results of computer simulation. The discrepancy between the results of modeling and measurements, peak time and propagation delays of the amplifier signal was revealed. Based on this, a decision to adjust the SPICE parameters of the elements used in the simulation was made. |
topic |
silicon photomultiplier reading electronics master slice array charge-sensitive amplifier |
url |
https://doklady.bsuir.by/jour/article/view/2672 |
work_keys_str_mv |
AT ovdvornikov analysisoftheresultsofdesigningreadingelectronicsofsiliconphotomultipliertubesdrivenbythebasematrixcrystalmn2xa030 AT vatchekhovski analysisoftheresultsofdesigningreadingelectronicsofsiliconphotomultipliertubesdrivenbythebasematrixcrystalmn2xa030 AT yadgalkin analysisoftheresultsofdesigningreadingelectronicsofsiliconphotomultipliertubesdrivenbythebasematrixcrystalmn2xa030 AT avkunts analysisoftheresultsofdesigningreadingelectronicsofsiliconphotomultipliertubesdrivenbythebasematrixcrystalmn2xa030 AT vrstempitski analysisoftheresultsofdesigningreadingelectronicsofsiliconphotomultipliertubesdrivenbythebasematrixcrystalmn2xa030 AT nnprokopenko analysisoftheresultsofdesigningreadingelectronicsofsiliconphotomultipliertubesdrivenbythebasematrixcrystalmn2xa030 |
_version_ |
1721267618918170624 |