Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2017-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2017/6050541 |
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doaj-4d5fa6c91c184d44b2ee2407ee2def8c2020-11-24T22:27:20ZengHindawi LimitedAdvances in Materials Science and Engineering1687-84341687-84422017-01-01201710.1155/2017/60505416050541Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”Z. N. Khan0S. Ahmed1M. Ali2Advanced Electronics Laboratories, International Islamic University, Islamabad, PakistanAdvanced Electronics Laboratories, International Islamic University, Islamabad, PakistanAdvanced Electronics Laboratories, International Islamic University, Islamabad, Pakistanhttp://dx.doi.org/10.1155/2017/6050541 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Z. N. Khan S. Ahmed M. Ali |
| spellingShingle |
Z. N. Khan S. Ahmed M. Ali Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” Advances in Materials Science and Engineering |
| author_facet |
Z. N. Khan S. Ahmed M. Ali |
| author_sort |
Z. N. Khan |
| title |
Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” |
| title_short |
Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” |
| title_full |
Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” |
| title_fullStr |
Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” |
| title_full_unstemmed |
Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” |
| title_sort |
erratum to “electrical characterization of postmetal annealed ultrathin tin gate electrodes in si mos capacitors” |
| publisher |
Hindawi Limited |
| series |
Advances in Materials Science and Engineering |
| issn |
1687-8434 1687-8442 |
| publishDate |
2017-01-01 |
| url |
http://dx.doi.org/10.1155/2017/6050541 |
| work_keys_str_mv |
AT znkhan erratumtoelectricalcharacterizationofpostmetalannealedultrathintingateelectrodesinsimoscapacitors AT sahmed erratumtoelectricalcharacterizationofpostmetalannealedultrathintingateelectrodesinsimoscapacitors AT mali erratumtoelectricalcharacterizationofpostmetalannealedultrathintingateelectrodesinsimoscapacitors |
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