The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

The advantages of ultraviolet light-emitting diodes (LEDs) inserted with a p-AlGaN layer, whose Al mole composition is less than that of the last barrier, between the last barrier and the electron blocking layer have been investigated by using the Crosslight APSYS programs. The results show that the...

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Bibliographic Details
Main Authors: Jun Zhang, Wu Tian, Feng Wu, Weiyi Yan, Hui Xiong, Jiangnan Dai, Yanyan Fang, Zhihao Wu, Changqing Chen
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Photonics Journal
Subjects:
p-AlGaN inserted layer
ultraviolet light-emitting diode (UV-LED)
efficiency droop alleviation
Crosslight
Online Access:https://ieeexplore.ieee.org/document/6584764/

Internet

https://ieeexplore.ieee.org/document/6584764/

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